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Applied Physics Letters : Performance comparison of Pb(Zr0.52Ti0.48)O3-only and Pb(Zr0.52Ti0.48)O3-on-silicon resonators

By Hengky Chandrahalim, Sunil A. Bhave, Ronald Polcawich, Jeff Pulskamp, Daniel Judy et al

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Book Id: WPLBN0002169259
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 10 December 2008

Title: Applied Physics Letters : Performance comparison of Pb(Zr0.52Ti0.48)O3-only and Pb(Zr0.52Ti0.48)O3-on-silicon resonators  
Author: Hengky Chandrahalim, Sunil A. Bhave, Ronald Polcawich, Jeff Pulskamp, Daniel Judy et al
Volume: Issue : December 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection (Contemporary), Applied Physics Letters Collection
Historic
Publication Date:
Publisher: American Institute of Physics

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Sunil A. Bhave, Ronald Polcawich, Jeff Pulskamp, Daniel Judy Et A, H. C. (n.d.). Applied Physics Letters : Performance comparison of Pb(Zr0.52Ti0.48)O3-only and Pb(Zr0.52Ti0.48)O3-on-silicon resonators. Retrieved from http://www.worldjournal.org/


Description
Description: This paper provides a quantitative comparison and explores the design space of lead zirconium titanate (PZT)–only and PZT-on-silicon length-extensional mode resonators for incorporation into radio frequency microelectromechanical system filters and oscillators. We experimentally measured the correlation of motional impedance (RX) and quality factor (Q) with the resonators’ silicon layer thickness (tSi). For identical lateral dimensions and PZT-layer thicknesses (tPZT), the PZT-on-silicon resonator has higher resonant frequency (fC), higher Q (5100 versus 140), lower RX (51 Ω versus 205 Ω), and better linearity [third-order input intercept point (IIP3) of +43.7 dBm versus +23.3 dBm]. In contrast, the PZT-only resonator demonstrated much wider frequency tuning range (5.1% versus 0.2%).

 
 


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