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Applied Physics Letters : Ultrafast carrier capturing in GaInP/Er,O-codoped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy

By Y. Terai, K. Hidaka, K. Fujii, S. Takemoto, M. Tonouchi et al

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Book Id: WPLBN0002169199
Format Type: PDF eBook :
File Size: Serial Publication
Reproduction Date: 12 December 2008

Title: Applied Physics Letters : Ultrafast carrier capturing in GaInP/Er,O-codoped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy  
Author: Y. Terai, K. Hidaka, K. Fujii, S. Takemoto, M. Tonouchi et al
Volume: Issue : December 2008
Language: English
Subject: Science, Physics, Natural Science
Collections: Periodicals: Journal and Magazine Collection, Applied Physics Letters Collection
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Publisher: American Institute of Physics

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K. Hidaka, K. Fujii, S. Takemoto, M. Tonouchi Et A, Y. T. (n.d.). Applied Physics Letters : Ultrafast carrier capturing in GaInP/Er,O-codoped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy. Retrieved from http://www.worldjournal.org/


Description
Description: Carrier capturing in GaInP/Er,O-codoped GaAs (GaAs:Er,O) /GaInP laser diodes (LDs) was investigated by means of the threshold current density (Jth) of laser emission. The Er-doped LDs showed laser emission of the GaAs band edge at room temperature, and its Jth increases with the Er flow rate during the growth. In the dependence of Jth on reciprocal cavity length, the effective gain factor of the LDs decreased by the codoping of Er and O. These results reveal that ultrafast capturing of injected carriers at an Er-related trap level is accomplished even in the stimulated emission region of GaAs. The fast capturing process allowed us to observe both the spontaneous intra-4f-shell emission due to Er3+ ions at 1.54 m and the stimulated emission at the GaAs band edge (~840 nm) in the Er-doped LDs.

 
 


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