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Journal of Applied Physics Collection


 
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Journal of Applied Physics : Relaxation time effects on dynamic co...

By: D. J. Shelton, T. Sun, J. C. Ginn, K. R. Coffey, and G. D. Boreman

Description: The behavior of nanoscale infrared antenna elements depends upon the dynamic conductivity of thin metallic films. Spectroscopic ellipsometer measurements of noble metal films show that when the product of the incident radiation frequency and the relaxation time is greater than unity, anomalous dynamic electron transport effects occur. In this regime electron scattering increases the conductivity of alloyed metallic films as demonstrated by ellipsometry measu...

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Journal of Applied Physics : Optical and structural properties of ...

By: D. Singh, K. Singh, B. S. Bajwa, G. S. Mudahar, D. P. Singh et al

Description: The density, molar volume, optical energy bandgap, and infrared absorption spectra in the range 400–4000 nm of borate glasses with composition 2xLi2O–xAl2O3–(1–3x)B2O3 (x varying from 0.10 to 0.18 mol fraction) prepared by conventional melt quench technique have been measured before and after successive γ-ray irradiation at the dose of 2.5 K Gy to elucidate the effect of gamma irradiation on such glasses. The radiation induced defects created by γ-ray and th...

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Journal of Applied Physics : Characteristics of amorphous Ag0.1(Ge...

By: Ki-Ho Song, Sung-Won Kim, Jae-Hee Seo, and Hyun-Yong Lee

Description: An amorphous chalcogenide Ge2Sb2Te5 film is most commonly used for phase-change data storage, in which its small volume is switched between amorphous and crystalline states by local heating with short laser or current pulses. A speed of amorphous-to-crystalline phase transformation in Ge2Sb2Te5 and Ag0.1(Ge2Sb2Te5)0.9 films has been evaluated on a nanosecond time scale using a 658-nm laser beam. The focused laser beam with a diameter <10 μm was illuminated i...

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Journal of Applied Physics : Ion transport in polyacetylene ionomers

By: Fuding Lin, Yongjun Wang, and Mark Lonergan

Description: Ion transport in cationically and anionically functionalized polyacetylene ionomers, PAC and PAA, respectively, was investigated by analyzing the impedance responses of thin film Au∣ionomer∣Au sandwich configurations. Samples were measured over a frequency range of 10−2–106 Hz and a temperature range of 298–398 K. Electrode polarization at low frequencies and dispersion due to ion hopping at higher frequencies were observed. The impedance data were analyzed ...

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Journal of Applied Physics : Inherent paramagnetic defects in laye...

By: M. Jivanescu, A. Stesmans, and M. Zacharias

Description: An extensive electron spin resonance (ESR) analysis has been carried out on structures comprised of Si nanoparticles ( ∼ 2 nm across) embedded in a regular pattern in an amorphous SiO2 matrix, fabricated by the SiO/SiO2 superlattice approach, with the intent to reveal and quantify occurring paramagnetic defects. The as-grown state is found to exhibit only a Si dangling bond (DB) signal, which through combination of first and second harmonic X-, K-, and Q-ban...

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Journal of Applied Physics : Direct evidence of detwinning in poly...

By: Z. H. Nie, R. Lin Peng, S. Johansson, E. C. Oliver, Y. Ren et al

Description: In situ time-of-flight neutron diffraction and high-energy x-ray diffraction techniques were used to reveal the preferred reselection of martensite variants through a detwinning process in polycrystalline Ni–Mn–Ga ferromagnetic shape memory alloys under uniaxial compressive stress. The variant reorientation via detwinning during loading can be explained by considering the influence of external stress on the grain/variant orientation-dependent distortion ener...

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Journal of Applied Physics : Thermal stability of nitrogen in nitr...

By: A. Herrera-Gomez, F. S. Aguirre-Tostado, M. A. Quevedo-Lopez, P. D. Kirsch, M. J. Kim et al

Description: We report on the stability under rapid thermal annealing (RTA) of the nitrogen depth profile in nitrided HfO2/SiO2/Si[001] and Hf0.8Si0.2O2/SiO2/Si[001] dielectric stacks. High resolution x-ray photoelectron spectroscopy (XPS) data indicate that the chemical component of nitrogen associated with the hafnium layer (binding energy of 396.7 eV) decreases considerably upon RTA. This was accompanied by a corresponding increase in the nitrogen component associated...

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Journal of Applied Physics : Spectroscopic determination of electr...

By: J. E. Maslar, W. S. Hurst, and C. A. Wang

Description: Phonon-plasmon coupled mode Raman spectra of n-type GaSb were measured at room temperature as a function of electron concentration. These spectra were obtained using an optical system based on 752.55 nm excitation. Utilization of this wavelength permits greater sensitivity to GaSb coupled mode Raman scattering over a wider doping range than is possible with visible wavelength excitation-based systems. A relatively simple spectral model for the electronic con...

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Journal of Applied Physics : Influence of annealing on the Er lumi...

By: A. Kanjilal, L. Rebohle, M. Voelskow, W. Skorupa, and M. Helm

Description: The impact of rapid thermal annealing (RTA) in producing samples by sequential implantation of Si and Er ions into a 200 nm SiO2 layer combined with different annealing cycles as well as the corresponding room-temperature visible and infrared photoluminescence (PL) have been studied. The Er-related PL intensity at 1533 nm for the samples prepared by implanting Si with subsequent annealing, followed by Er implantation, and final annealing (type I) was found t...

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Journal of Applied Physics : Low Schottky barrier height for ErSi2...

By: Nicolas Reckinger, Xiaohui Tang, Vincent Bayot, Dmitri A. Yarekha, Emmanuel Dubois et al

Description: In this paper, the formation of Er disilicide (ErSi2−x) with a Ti cap on low doping n-type Si(100) is investigated. After deposition in ultrahigh vacuum, the solid-state reaction between Er and Si is performed ex situ by rapid thermal annealing between 450 and 600 °C in a forming gas ambience with a 10 nm thick Ti capping layer to protect Er from oxidation. X-ray diffraction analyses have confirmed the formation of ErSi2−x for all annealing temperatures. The...

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Journal of Applied Physics : Growth and field emission characteris...

By: S. K. Arora, S. Chhoker, N. K. Sharma, V. N. Singh, and V. D. Vankar

Description: The effect of substrate pretreatments such as ultrasonication or scratching by diamond powder on the microstructure and field emission characteristics of diamond grown over silicon and macroporous (anodized) silicon substrates was investigated. These films were grown in a hot filament chemical vapor deposition (CVD) system. Scanning electron microscope (SEM) studies revealed that ultrasonic pretreatment of the substrates increases nucleation density of CVD d...

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Journal of Applied Physics : Electron spin resonance study of self...

By: V. V. Laguta, M. Nikl, J. Rosa, B. V. Grinyov, L. L. Nagornaya et al

Description: The self-trapping of holes at oxygen anions was studied by electron spin resonance in UV irradiated CdWO4 crystals. Analysis of superhyperfine interaction of the holes with 183W and 111,113Cd isotopes shows that the self-trapped hole is either delocalized in the space between two energetically equivalent nearest neighbor oxygen ions or tunnels between them. When the temperature increases above 40–50 K the self-trapped holes are thermally liberated and can be...

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Journal of Applied Physics : Vacancy generation during Cu diffusio...

By: M. Elsayed, V. Bondarenko, K. Petters, J. Gebauer, and R. Krause-Rehberg

Description: Positron lifetime and Doppler broadening spectroscopy were applied for a study of defect properties of semi-insulating GaAs after diffusion of copper. A 30 nm layer of Cu was deposited by evaporation to the undoped GaAs samples. The diffusion of Cu was performed during an annealing step at 1100 °C at different arsenic vapor pressures. The samples were quenched into room temperature water. The initial semi-insulating (SI) undoped GaAs sample shows no positron...

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Journal of Applied Physics : Nanomechanical properties of piezores...

By: Paul R. Wilkinson, William S. Klug, Brandon Van Leer, and James K. Gimzewski

Description: Concise analytical expressions for the effective spring constant, resonance frequency, and effective mass are derived using elementary beam theory for cantilevers, which exhibit a basic rectangular cross section modified by a rectangular hole centered at the base, which is a typical case for piezoresistive cantilevers. The results demonstrate that each of these mechanical properties can be represented as the property of the same cantilever in the absence of ...

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Journal of Applied Physics : Optical properties of m-plane GaN qua...

By: Julien Renard, Benoit Amstatt, Catherine Bougerol, Edith Bellet-Amalric, Bruno Daudin et al

Description: We have studied the optical properties of m-plane GaN/AlN quantum dots and quantum wires. The photoluminescence, both on an ensemble of nanostructures and on single nanostructures, shows a strong degree of linear polarization perpendicular to the c-axis. Time-resolved photoluminescence evidences the strong reduction in the quantum confined Stark effect. Temperature dependence measurements suggest a difference in nonradiative processes between quantum dots and quantum wires.

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Journal of Applied Physics : Reduced bound exciton and surface exc...

By: Y. Z. Zhang, H. P. He, Y. Z. Jin, B. H. Zhao, Z. Z. Ye et al

Description: Temperature-dependent photoluminescence (PL) spectroscopy is employed to investigate the effects of exposure to ambient air on the optical property of Al-doped ZnO nanorods. Low temperature PL of the as-grown nanorods shows dominant D0X (excitons bound to neutral donors) emission at 3.363 eV and surface state-related emission at 3.310 eV. After exposure to ambient air, both of them vanish and the first LO phonon replica of free exciton is observed instead. I...

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Journal of Applied Physics : Green light emission from InGaN multi...

By: W. Feng, V. V. Kuryatkov, A. Chandolu, D. Y. Song, M. Pandikunta et al

Description: Selective area epitaxy has been used to grow pyramidal GaN stripes, followed by InGaN multiple quantum well (MQW) structures, in order to produce long-wavelength green light emission. Stripes oriented along 〈110〉 produce smooth {101} sidewall facets. The room-temperature optical properties are investigated by cathodoluminescence spectroscopy using a scanning electron microscope. MQWs grown in unmasked reference regions exhibit emission at 450 nm. The stripe ...

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Journal of Applied Physics : Propagation loss of terahertz surface...

By: Bowen Wang, Liu Liu, and Sailing He

Description: We analyze the propagation of terahertz surface plasmon polaritons on a periodically structured Ag surface by using a full-vectorial finite-difference time-domain method. The impact of some structural parameters on the dispersion relation and the propagation loss is analyzed. As the groove width increases, the dispersion curves asymptotically reach lower frequency values at the Brillouin zone edge, while the relation between the propagation loss and the groo...

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Journal of Applied Physics : Effects of indium segregation on opti...

By: Tomoya Inoue, Masataka Mamizuka, Hiroshi Mizuno, Osamu Kojima, Takashi Kita et al

Description: The emission wavelength of InAs quantum dots (QDs) capped by GaAs is found to be systematically controlled by doping nitrogen on the QDs surface with a thin spacer layer in between QDs and the nitrogen-doped layer. Cross-sectional transmission electron microscope images of the nitrogen-doped QD indicate that the nitrogen-doped layer acts as a blocking layer for In segregation. Furthermore, the in-plane linear polarization of the emission has been demonstrate...

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Journal of Applied Physics : Adhesion and interfacial fracture tou...

By: Nima Rahbar, Kurt Wolf, Argjenta Orana, Roy Fennimore, Zong Zong et al

Description: This paper presents the results of a combined experimental and theoretical study of adhesion between hard and soft layers that are relevant to medical devices such as drug-eluting stents and semiconductor applications. Brazil disk specimens were used to measure the interfacial fracture energies between model parylene C and 316L stainless steel over a wide range of mode mixities. The trends in the overall fracture energies are predicted using a combination of...

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